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| 7MBR30NE060 IGBT MODULE 600V / 30A / PIM IGBT Modules Features * High Speed Switching * Voltage Drive * Low Inductance Module Structure * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol VCES VGES IC Collector current ICP -IC Collector power disspation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power disspation PC Repetitive peak reverse voltage VRRM Average forward current IF(AV) Surge current IFSM Repetitive peak reverse voltage VRRM Non-Repetitive peak reverse voltage VRSM Average output current IO Surge current (Non-Repetitive) IFSM It (Non-Repetitive) Collector-Emitter voltage Gate-Emitter voltage Tj Tstg Viso Condition Ra ting 600 20 30 60 30 120 600 20 30 60 120 600 1 50 800 900 50 350 648 +150 -40 to +125 AC 2500 1.7 *1 Unit V V A A A W V V A A W V A A V V A A As C C V N*m Inverter Continuous 1ms 1 device Continuous 1ms 1 device Brake 10ms Converter 50Hz/60Hz sine wave Tj=150C, 10ms Tj=150C, 10ms Operating junction temperature Storage temperature Isolation voltage Mounting screw torque AC : 1 minute *1 Recommendable value : 1.3 to 1.7 N*m (M4) IGBT Module Electrical characteristics (Tj=25C unless without specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Collector-Emitter voltage Input capacitance Switching time Symbol ICES IGES VGE(th) VCE(sat) -VCE Cies ton tr toff tf trr ICES IGES VCE(sat) ton tr toff tf IRRM trr VFM IRRM Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=30mA VGE=15V, Ic=30A -Ic=30A VGE=0V, VCE=10V, f=1MHz VCC=300V IC=30A VGE=15V RG=82 ohm IF=30A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=30A, VGE=15V VCC=300V IC=30A VGE=15V RG=82ohm VR=600V IF=50A VR=800V Min. 7MBR30NE060 Characteristics Typ. Max. 1.0 20 4.5 7.5 2.8 3.0 1980 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1.0 0.6 1.55 1.0 Unit mA A V V V pF s s s s s mA A V s s s s mA s V mA Inverter (IGBT) Brake (FWD) Converter Brake (IGBT) Item Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Switching time Reverse current Reverse recovery time Forward voltage Reverse current Thermal Characteristics Symbol Condition Min. Inverter IGBT Inverter FRD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.04 2.22 1.04 2.10 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic * NLU (Over current Limiting circuit) IGBT Module Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25C 7MBR30NE060 Collector current vs. Collector-Emitter voltage Tj=125C 70 70 60 60 Collector current : Ic [A] 40 Collector current : Ic [A] 0 1 2 3 4 5 50 50 40 30 30 20 20 10 10 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 0 Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=15V, Tj=25C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time vs. Collector current Vcc=300V, RG=82 ohm, VGE=15V, Tj=125C 100 Switching time : ton, tr toff, tf [n sec.] 100 10 0 10 20 30 40 50 Collector current : Ic [A] 10 0 10 20 30 40 50 Collector current : Ic [A] IGBT Module 7MBR30NE060 Switching time vs. RG Vcc=300V, Ic=30A, VGE=15V, Tj=25C 500 Dynamic input characteristics Tj=25C 25 Switching time : ton, tr, toff, tf [n sec.] 1000 Collector-Emitter voltage : VCE [V] 400 20 300 15 100 200 10 100 5 10 10 100 Gate resistance : RG [ohm] 0 0 50 100 Gate charge : Qg [nC] 150 0 FWD Forward current vs. Forward voltage VGE=0V Reverse recovery characteristics trr, Irr, vs. IF 70 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 60 100 Forward current : IF [A] 50 40 30 10 20 10 1 0 1 2 3 4 5 0 10 20 30 40 50 0 Forward voltage : VF [V] Forward current : IF [A] Transient thermal resistance 300 Reversed biased safe operating area > < +VGE=15V, -VGE < 15V, Tj = 125C, RG = 82 ohm = Thermal resistance : Rth (j-c) [C/W] 250 1 Collector current : Ic [A] 200 150 0.1 100 50 0 0.001 0.01 Pulse width : PW [sec.] 0.1 1 0 100 200 300 400 500 600 Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] IGBT Module 7MBR30NE060 Switching loss vs. Collector current Vcc=300V, RG=82 ohm, VGE=15V 3 10 Capacitance vs. Collector-Emitter voltage Tj=25C Switching loss : Eon, Eoff, Err [mJ /cycle] 2 Capacitance : Cies, Coes, Cres [nF] 1 1 0.1 0 0 10 20 30 40 50 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Converter Diode Forward current vs. Forward voltage 60 50 Forward current : IF [A] 40 30 20 10 0 0 0.5 1.0 Forward voltage : VF [V] 1.5 2.0 IGBT Module Outline Drawings, mm 7MBR30NE060 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com |
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